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World Congress on Regulations of Nanotechnology

Chicago, USA

Shaukat Ayesha

BUITEMS, Pakistan

Title: Comparative study of silicon nanowires and carbon nanotubes’ field effect transistors in ballistic transport

Biography

Biography: Shaukat Ayesha

Abstract

This study demonstrates the comparison of silicon nanowire field effect transistor (SiNWTs) and carbon nanotube field effect transistor (CNTFETs) using FETTOY, a nano device simulator. In this regard, effect of different structural parameters like oxide thickness, gate controlled parameter, thickness of dielectric material of all the structures are analyzed. Results of quantum capacitance, drain current v/s drain voltage, drain current v/s gate voltage, drain induced barrier lowering (DIBL), threshold swing, and injection velocity, on and off current and output conductance for each structure at different temperature will be discussed.